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| DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape. Top view Side view handbook, 4 columns BYG80 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYG80A BYG80B BYG80C BYG80D BYG80F BYG80G BYG80J VR continuous reverse voltage BYG80A BYG80B BYG80C BYG80D BYG80F BYG80G BYG80J IF(AV) average forward current BYG80A to D BYG80F; BYG80G BYG80J IF(AV) average forward current BYG80A to D BYG80F; BYG80G BYG80J Tamb = 60 C; AL2O3 PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19 Ttp = 100 C; see Figs 2, 3 and 4 averaged over any 20 ms period; see also Figs 17, 18 and 19 - - - - - - - - - - - - - 50 100 150 200 300 400 600 2.4 2.3 2.0 1.25 1.15 0.95 V V V V V V V A A A A A A - - - - - - - 50 100 150 200 300 400 600 V V V V V V V CONDITIONS MIN. MAX. UNIT 1997 Nov 25 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IF(AV) PARAMETER average forward current BYG80A to D BYG80F; BYG80G BYG80J IFRM repetitive peak forward current BYG80A to D BYG80F; BYG80G BYG80J IFRM repetitive peak forward current BYG80A to D BYG80F; BYG80G BYG80J IFRM repetitive peak forward current BYG80A to D BYG80F; BYG80G BYG80J IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; Tj = 25 C prior to surge; VR = VRRMmax BYG80A to D BYG80F; BYG80G; BYG80J ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.20 L = 120 mH; Tj = Tj max prior to surge; inductive load switched off Tamb = 60 C; epoxy PCB mounting; see Figs 14, 15 and 16 Tamb = 60 C; AL2O3 PCB mounting; see Figs 11, 12 and 13 Ttp = 100 C; see Figs 8, 9 and 10 - - - - - - - - - - - - -65 -65 CONDITIONS Tamb = 60 C; epoxy PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19 BYG80 series MIN. - - - MAX. 0.95 0.85 0.65 21 21 18 11 11 9 8 8 6 36 32 10 +175 +175 A A A A A A A A A A A A A A UNIT mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYG80A to D BYG80F; BYG80G BYG80J VF forward voltage BYG80A to D BYG80F; BYG80G BYG80J IF = 1 A; see Figs 21, 22 and 23 - - - - - - 0.93 0.98 1.20 V V V CONDITIONS IF = 1 A; Tj = Tj max; see Figs 21, 22 and 23 MIN. - - - TYP. - - - MAX. 0.67 0.73 0.96 V V V UNIT 1997 Nov 25 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL V(BR)R PARAMETER reverse avalanche breakdown voltage BYG80A BYG80B BYG80C BYG80D BYG80F BYG80G BYG80J IR IR reverse current reverse current BYG80A to D BYG80F; BYG80G and J trr reverse recovery time BYG80A to D BYG80F; BYG80G and J Cd diode capacitance BYG80A to D BYG80F; BYG80G BYG80J dI R -------dt maximum slope of reverse recovery current BYG80A to D BYG80F; BYG80G and J THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.28 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.29 f = 1 MHz; VR = 0; see Fig.26 - - - 90 70 65 VR = VRRMmax; see Figs 24 and 25 VR = VRRMmax; Tj = 165 C; see Figs 24 and 25 CONDITIONS IR = 0.1 mA 55 110 165 220 330 440 675 - - - - - - - - - MIN. BYG80 series TYP. MAX. UNIT - - - - - - - 10 V V V V V V V A - - - - - - - - 100 150 25 50 - - - A A ns ns pF pF pF - - - - 3 4 A/s A/s VALUE 25 100 150 UNIT K/W K/W K/W 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig.27. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.27. For more information please refer to the "General Part of associated Handbook". 1997 Nov 25 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA MGL081 BYG80 series handbook, halfpage 4 handbook, halfpage 4 MBK454 IF(AV) (A) 3 IF(AV) (A) 3 2 2 1 1 0 0 100 Ttp (oC) 200 0 0 40 80 120 160 200 Ttp (C) BYG80A to D Switched mode application; VR = VRRMmax; = 0.5; a = 1.42. BYG80F and G Switched mode application; VR = VRRMmax; = 0.5; a = 1.42. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 4.0 MGL094 handbook, halfpage 2 MGL079 IFAV (A) 3.0 IF(AV) (A) 1.5 (1) 2.0 1 (2) 1.0 0.5 0 0 40 80 120 200 160 Ttp (C) 0 0 100 Tamb (C) 200 BYG80J Switched mode application. VR = VRRMmax; = 0.5; a = 1.42. BYG80A to D Switched mode application; VR = VRRMmax; = 0.5; a = 1.42 Device mounted as shown in Fig.27; 1: Al2O3 PCB; 2: epoxy PCB. Fig.4 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1997 Nov 25 5 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, halfpage 2 MGL080 handbook, halfpage 1.6 MGL092 IF(AV) (A) 1.5 IF(AV) (A) 1.2 (1) 1 (1) 0.8 (2) 0.5 (2) 0.4 0 0 100 Tamb (C) 200 0 0 40 80 120 160 200 Tamb (oC) BYG80F and G Switched mode application; VR = VRRMmax; = 0.5; a = 1.42 Device mounted as shown in Fig.27; 1: Al2O3 PCB; 2: epoxy PCB. BYG80J Switched mode application; VR = VRRMmax; = 0.5; a = 1.42 Device mounted as shown in Fig.27; 1: Al2O3 PCB; 2: epoxy PCB. Fig.6 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.7 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, full pagewidth 30 MGL086 IFRM (A) = 0.05 20 0.1 10 0.2 0.5 1 0 10-2 10-1 1 10 102 103 tP (ms) 104 BYG80A to D Ttp = 100 C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 25 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers 30 BYG80 series MGL087 handbook, full pagewidth IFRM (A) = 0.05 20 0.1 10 0.2 0.5 1 0 10-2 10-1 1 10 102 103 tP (ms) 104 BYGF and G Ttp = 100 C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 20 MGL096 IFRM (A) 16 = 0.05 12 0.1 8 0.2 4 0.5 1 0 10-2 10-1 1 10 102 103 tP (ms) 104 BYG80J Ttp = 100 C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 25 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series MGL082 handbook, full pagewidth 20 IFRM (A) 16 12 = 0.05 8 0.1 0.2 4 0.5 1 0 10-2 10-1 1 10 102 tp (ms) 103 BYG80A to D Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGL083 handbook, full pagewidth 20 IFRM (A) 16 12 = 0.05 8 0.1 0.2 4 0.5 1 0 10-2 10-1 1 10 102 tp (ms) 103 BYG80F and G Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 25 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers 10 BYG80 series MGL093 handbook, full pagewidth IFRM (A) 8 = 0.05 6 0.1 4 0.2 2 0.5 1 0 10-2 10-1 1 10 102 103 tP (ms) 104 BYG80J Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGL084 handbook, full pagewidth 10 IFRM (A) 8 = 0.05 6 0.1 4 0.2 2 0.5 1 0 10-2 10-1 1 10 102 tp (ms) 103 BYG80A to D Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 25 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series MGL085 handbook, full pagewidth 10 IFRM (A) 8 = 0.05 6 0.1 4 0.2 2 0.5 1 0 10-2 10-1 1 10 102 tp (ms) 103 BYG80F and G Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 8 MGL097 IFRM (A) 6 = 0.05 0.1 4 0.2 2 0.5 1 0 10-2 10-1 10 102 103 tP (ms) 104 BYG80J Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 25 10 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, halfpage 8 MGL088 handbook, halfpage 8 MGL089 P (W) 6 a = 3 2.5 2 1.57 1.42 P (W) 6 a = 3 2.5 2 1.57 1.42 4 4 2 2 0 0 2 IF(AV) (A) 4 0 0 2 IF(AV) (A) 4 BYG80A to D a = IF(RMS)/IF(AV); VRRMmax. BYG80F and G a = IF(RMS)/IF(AV); VRRMmax. Fig.17 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.18 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage 8 MGL099 handbook, halfpage 200 MBK455 P (W) 6 a = 3 2.5 2 1.57 1.42 Tj (C) 4 100 2 0 0 2 IF(AV) (A) 4 0 0 50 VR (%VRmax) 100 BYG80J a = IF(RMS)/IF(AV); VRRMmax. Solid line = VR. Dotted line = VRRM; = 0.5. Fig.19 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.20 Maximum permissible junction temperature as a function of maximum reverse voltage percentage. 1997 Nov 25 11 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, halfpage 10 IF MGL090 handbook, halfpage 10 MGL091 (A) 8 IF (A) 8 (1) (2) 6 6 4 4 (1) (2) 2 2 0 0 1 2 VF (V) 3 0 0 0.4 0.8 1.2 1.6 VF (V) 2.0 BYG80A to D (1) Tj = 175 C. (2) Tj = 25 C. BYG80F and G (1) Tj = 175 C. (2) Tj = 25 C. Fig.21 Forward current as a function of forward voltage; maximum values. Fig.22 Forward current as a function of forward voltage; maximum values. handbook, halfpage 10 IF (A) 8 MGL098 103 handbook, halfpage IR (A) 102 MGL095 6 4 (1) (2) 10 2 0 0 1 2 VF (V) 3 1 0 100 Tj (C) 200 BYG80J (1) Tj = 175 C. (2) Tj = 25 C. BYG80A to D VR = VRMMmax. Fig.23 Forward current as a function of forward voltage; maximum values. Fig.24 Reverse current as a function of junction temperature; maximum values. 1997 Nov 25 12 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series 103 handbook, halfpage IR (A) 102 MGC549 102 handbook, halfpage MGL078 Cd (pF) (1) 10 (2) (3) 10 1 0 100 Tj (C) 200 1 1 10 102 VR (V) 103 BYG80F to J VR = VRMMmax. f = 1 MHz; Tj = 25 C. (1) BYG80A to D (2) BYG80F and G (3) BYG80J Fig.25 Reverse current as a function of junction temperature; maximum values. Fig.26 Diode capacitance as a function of reverse voltage; typical values. 50 IF handbook, halfpage dI F dt 4.5 50 2.5 dI R dt 100% IR 1.25 MSB213 MGC499 t rr 10% t Dimensions in mm. Fig.27 Printed-circuit board for surface mounting. Fig.28 Reverse recovery definitions. 1997 Nov 25 13 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.29 Test circuit and reverse recovery time waveform and definition. 1997 Nov 25 14 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors BYG80 series SOD106 H D A A1 c Q E b (1) 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09 1997 Nov 25 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BYG80 series This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Nov 25 16 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers NOTES BYG80 series 1997 Nov 25 17 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers NOTES BYG80 series 1997 Nov 25 18 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers NOTES BYG80 series 1997 Nov 25 19 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA56 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/1200/02/pp20 Date of release: 1997 Nov 25 Document order number: 9397 750 02662 |
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